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Electronic Devices and Circuits Book 2018 Best Study Materials

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Candidates can get Best Electronic Devices and Circuits Books 2018 Best List of Books for Candidates can get Best Electronic Devices and Circuits Entrance Exam (Electronic Devices and Circuits) Books 2018 Posted Exam in by Millman Jacob and Christos Halkias etc.

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Candidates can get Best Electronic Devices and Circuits Books 2018 also a Top List of Main Study Materials for 2017-2018 entrance exam in India.

  • Electronic Devices and Circuits
    by Millman Jacob and Christos Halkias

Syllabus:-

Objectives:

This is a fundamental course, basic knowledge of which is required by all the circuit branch engineers. This
course focuses:

  • To familiarize the student with the principle of operation, analysis and design of Junction diode, BJT and FET amplifier circuits, transistors and field effect transistors.
  • To understand diode as rectifier.
  • To study basic principle of filter circuits and various types.

UNIT – I

P-N Junction Diode: Qualitative Theory of P-N Junction, P-N Junction as a Diode, Diode Equation, Volt- Ampere Characteristics, Temperature dependence of VI characteristic, Ideal versus Practical – Resistance levels
(Static and Dynamic), Transition and Diffusion Capacitances, Diode Equivalent Circuits, Load Line Analysis, Breakdown Mechanisms in Semiconductor Diodes, Zener Diode Characteristics.
Special Purpose Electronic Devices: Principle of Operation and Characteristics of Tunnel Diode (with the help of Energy Band Diagram), Varactor Diode, SCR and Semiconductor Photo Diode.

UNIT – II

Rectifiers and Filters : The P-N junction as a Rectifier, Half wave Rectifier, Full wave Rectifier, Bridge Rectifier, Harmonic components in a Rectifier Circuit, Inductor Filters, Capacitor Filters, L- Section Filters, π- Section Filters, Comparision of Filters, Voltage Regulation using Zener Diode.

UNIT – III

Bipolar Junction Transistor and UJT: The Junction Transistor, Transistor Current Components, Transistor as an Amplifier, Transistor Construction, BJT Operation, BJT Symbol, Common Base, Common Emitter and Common Collector Configurations, Limits of Operation , BJT Specifications, BJT Hybrid Model, Determination of h-parameters from Transistor Characteristics, Comparison of CB, CE, and CC Amplifier Configurations, UJT and Characteristics.

UNIT – IV

Transistor Biasing and Stabilization: Operating Point, The DC and AC Load lines, Need for Biasing, Fixed Bias, Collector Feedback Bias, Emitter Feedback Bias, Collector – Emitter Feedback Bias, Voltage Divider Bias, Bias Stability, Stabilization Factors, Stabilization against variations in VBE and β, Bias Compensation using Diodes and Transistors, Thermal Runaway, Thermal Stability, Analysis of a Transistor Amplifier Circuit using h – Parameters.

UNIT – V

Field Effect Transistor and FET Amplifiers

Field Effect Transistor: The Junction Field Effect Transistor (Construction, principle of operation, symbol) – Pinch-off Voltage – Volt-Ampere characteristics, The JFET Small Signal Model, MOSFET (Construction, principle of operation, symbol), MOSFET Characteristics in Enhancement and Depletion modes.

FET Amplifiers: FET Common Source Amplifier, Common Drain Amplifier, Generalized FET Amplifier, Biasing FET, FET as Voltage Variable Resistor, Comparison of BJT and FET.

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